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Preferential Amorphization and Defect Annihilation at Nanocavities in Silicon Durion Ion Irradiation

Williams, James; Zhu, Xiaohua; Ridgway, Mark C; Conway, Martin; Williams, Ben C; Fortuna, Frank Nicholas; Ruault, M-O; Bernas, Harry

Description

Si containing a band of nanocavities has been irradiated with Si+ ions at elevated temperatures to study interactions of irradiation-induced defects with open volume defects. For irradiation at 100°C, nanocavities are shown to be preferential nucleation

CollectionsANU Research Publications
Date published: 2000
Type: Journal article
URI: http://hdl.handle.net/1885/24694
Source: Applied Physics Letters

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