Skip navigation
Skip navigation

Novel crack propagation in PECVD-deposited dielectric thin films

Elliman, Robert; Dall (previously Weijers), Tessica; Spooner, M G; Kim, Tae-Hyun; Wilkinson, Andrew; Huth, S; Tobias, V

Description

Silicon-rich silicon oxide (SRSO) films, deposited onto (1 0 0) silicon substrates by plasma-enhanced chemical vapor deposition (PECVD), are shown to develop large tensile stresses during annealing in the temperature range 350-650 °C, a process that has

CollectionsANU Research Publications
Date published: 2007
Type: Journal article
URI: http://hdl.handle.net/1885/24662
Source: Nuclear Instruments and Methods in Physics Research: Section B
DOI: 10.1016/j.nimb.2007.01.039

Download

File Description SizeFormat Image
01_Elliman_Novel_crack_propagation_in_2007.pdf478.01 kBAdobe PDF    Request a copy


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  23 August 2018/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator