Novel crack propagation in PECVD-deposited dielectric thin films

Elliman, Robert; Dall (previously Weijers), Tessica; Spooner, M G; Kim, Tae-Hyun; Wilkinson, Andrew; Huth, S; Tobias, V

doi:10.1016/j.nimb.2007.01.039

A change is coming. Click to see a sneak peek of the new Open Research Repository.

Novel crack propagation in PECVD-deposited dielectric thin films

Request a Copy

link to publisher version

Altmetric Citations

Elliman, Robert; Dall (previously Weijers), Tessica; Spooner, M G; Kim, Tae-Hyun; Wilkinson, Andrew; Huth, S; Tobias, V

Description

Silicon-rich silicon oxide (SRSO) films, deposited onto (1 0 0) silicon substrates by plasma-enhanced chemical vapor deposition (PECVD), are shown to develop large tensile stresses during annealing in the temperature range 350-650 °C, a process that has

Collections	ANU Research Publications
Date published:	2007
Type:	Journal article
URI:	http://hdl.handle.net/1885/24662
Source:	Nuclear Instruments and Methods in Physics Research: Section B
DOI:	10.1016/j.nimb.2007.01.039

Download

File	Description	Size	Format	Image
01_Elliman_Novel_crack_propagation_in_2007.pdf		478.01 kB	Adobe PDF	Request a copy

Show full item record

Novel crack propagation in PECVD-deposited dielectric thin films

Altmetric Citations

Description

Download