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Novel crack propagation in PECVD-deposited dielectric thin films

Elliman, Robert; Dall (previously Weijers), Tessica; Spooner, M G; Kim, Tae-Hyun; Wilkinson, Andrew; Huth, S; Tobias, V


Silicon-rich silicon oxide (SRSO) films, deposited onto (1 0 0) silicon substrates by plasma-enhanced chemical vapor deposition (PECVD), are shown to develop large tensile stresses during annealing in the temperature range 350-650 °C, a process that has

CollectionsANU Research Publications
Date published: 2007
Type: Journal article
Source: Nuclear Instruments and Methods in Physics Research: Section B
DOI: 10.1016/j.nimb.2007.01.039


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