Ion Beam Induced Epitaxy Experiments in Silicon under Channeling and Random Alignments
-
Altmetric Citations
Williams, James; Young, I M; Conway, Martin
Description
This paper examines issues arising in ion beam induced epitaxial crystallisation (IBIEC) of both surface and buried amorphous silicon layers at 320°C under random and channeled alignment of MeV C+ beams. These issues include: random versus channeled ener
| Collections | ANU Research Publications |
|---|---|
| Date published: | 2000 |
| Type: | Journal article |
| URI: | http://hdl.handle.net/1885/24523 |
| Source: | Nuclear Instruments and Methods in Physics Research: Section B |
| DOI: | 10.1016/S0168-583X(99)00904-0 |
Download
| File | Description | Size | Format | Image |
|---|---|---|---|---|
| 01_Williams_Ion_Beam_Induced_Epitaxy_2000.pdf | 136.14 kB | Adobe PDF | Request a copy |
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.
Updated: 17 November 2022/ Responsible Officer: University Librarian/ Page Contact: Library Systems & Web Coordinator
+61 2 6125 5111
The Australian National University, Canberra
CRICOS Provider : 00120C
ABN : 52 234 063 906
