Ion Beam Induced Epitaxy Experiments in Silicon under Channeling and Random Alignments
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Williams, James; Young, I M; Conway, Martin
Description
This paper examines issues arising in ion beam induced epitaxial crystallisation (IBIEC) of both surface and buried amorphous silicon layers at 320°C under random and channeled alignment of MeV C+ beams. These issues include: random versus channeled ener
Collections | ANU Research Publications |
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Date published: | 2000 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/24523 |
Source: | Nuclear Instruments and Methods in Physics Research: Section B |
DOI: | 10.1016/S0168-583X(99)00904-0 |
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01_Williams_Ion_Beam_Induced_Epitaxy_2000.pdf | 136.14 kB | Adobe PDF | Request a copy |
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