Ion Beam Induced Epitaxy Experiments in Silicon under Channeling and Random Alignments
Williams, James; Young, I M; Conway, Martin
This paper examines issues arising in ion beam induced epitaxial crystallisation (IBIEC) of both surface and buried amorphous silicon layers at 320°C under random and channeled alignment of MeV C+ beams. These issues include: random versus channeled ener
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|Source:||Nuclear Instruments and Methods in Physics Research: Section B|
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