Skip navigation
Skip navigation

Ion Beam Induced Epitaxy Experiments in Silicon under Channeling and Random Alignments

Williams, James; Young, I M; Conway, Martin

Description

This paper examines issues arising in ion beam induced epitaxial crystallisation (IBIEC) of both surface and buried amorphous silicon layers at 320°C under random and channeled alignment of MeV C+ beams. These issues include: random versus channeled ener

CollectionsANU Research Publications
Date published: 2000
Type: Journal article
URI: http://hdl.handle.net/1885/24523
Source: Nuclear Instruments and Methods in Physics Research: Section B
DOI: 10.1016/S0168-583X(99)00904-0

Download

File Description SizeFormat Image
01_Williams_Ion_Beam_Induced_Epitaxy_2000.pdf136.14 kBAdobe PDF    Request a copy


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  23 August 2018/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator