Ion Beam Induced Epitaxy Experiments in Silicon under Channeling and Random Alignments
This paper examines issues arising in ion beam induced epitaxial crystallisation (IBIEC) of both surface and buried amorphous silicon layers at 320°C under random and channeled alignment of MeV C+ beams. These issues include: random versus channeled ener
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|Source:||Nuclear Instruments and Methods in Physics Research: Section B|
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