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Recombination activity of iron-boron pairs in compensated p-type silicon

MacDonald, Daniel; Liu, An Yao


Recently, the possible presence of boron-phosphorus pairs in compensated Si has been proposed in order to explain the unexpected behaviour of boron-oxygen defects in this material. These B-P pairs should also lead to an altered recombination activity of Fe-acceptor pairs in compensated Si, since some of the Fe-acceptor pairs would also be bound to P atoms, altering their energy level and carrier capture properties. In this work, we have used carrier lifetime measurements on Fe-implanted...[Show more]

CollectionsANU Research Publications
Date published: 2010
Type: Journal article
Source: Physica Status Solidi B (On-line)
DOI: 10.1002/pssb.201046157


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