Recombination activity of iron-boron pairs in compensated p-type silicon
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MacDonald, Daniel; Liu, An Yao
Description
Recently, the possible presence of boron-phosphorus pairs in compensated Si has been proposed in order to explain the unexpected behaviour of boron-oxygen defects in this material. These B-P pairs should also lead to an altered recombination activity of Fe-acceptor pairs in compensated Si, since some of the Fe-acceptor pairs would also be bound to P atoms, altering their energy level and carrier capture properties. In this work, we have used carrier lifetime measurements on Fe-implanted...[Show more]
Collections | ANU Research Publications |
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Date published: | 2010 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/24287 |
Source: | Physica Status Solidi B (On-line) |
DOI: | 10.1002/pssb.201046157 |
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