Hierarchal silica nanowire growth via single step annealing
Branched silica nanowires were grown on silicon substrates using a gold-catalyzed vapor-liquid-solid process in which the substrate was covered with a silicon capping layer. The reduced O2 partial pressure due to the capping layer is shown to result in regions of frustrated nanowire growth. By comparing electron micrographs from different regions, a growth mechanism for the branched nanowires is proposed.
|Collections||ANU Research Publications|
|Source:||Proceedings of International Conference on Nanoscience and Nanotechnology (ICONN 2010)|