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Hierarchal silica nanowire growth via single step annealing

Shalav, Avi; Elliman, Robert


Branched silica nanowires were grown on silicon substrates using a gold-catalyzed vapor-liquid-solid process in which the substrate was covered with a silicon capping layer. The reduced O2 partial pressure due to the capping layer is shown to result in regions of frustrated nanowire growth. By comparing electron micrographs from different regions, a growth mechanism for the branched nanowires is proposed.

CollectionsANU Research Publications
Date published: 2010
Type: Conference paper
Source: Proceedings of International Conference on Nanoscience and Nanotechnology (ICONN 2010)
DOI: 10.1109/ICONN.2010.6045252


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