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Novel growth and properties of GaAs nanowires on Si substrates

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Kang, Jung-Hyun; Gao, Qiang; Joyce, Hannah J; Jagadish, Chennupati; Kim, Yong; Choi, Duk-Yong; Guo, Yi N; Xu, Hongyi; Zou, Jin; Fickenscher, M A; Smith, Leigh M; Jackson, Howard E; Yarrison-Rice, Jan M; Tan, Hark Hoe

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Straight, vertically aligned GaAs nanowires were grown on Si(111) substrates coated with thin GaAs buffer layers. We find that the V/III precursor ratio and growth temperature are crucial factors influencing the morphology and quality of buffer layers. A

dc.contributor.authorKang, Jung-Hyun
dc.contributor.authorGao, Qiang
dc.contributor.authorJoyce, Hannah J
dc.contributor.authorJagadish, Chennupati
dc.contributor.authorKim, Yong
dc.contributor.authorChoi, Duk-Yong
dc.contributor.authorGuo, Yi N
dc.contributor.authorXu, Hongyi
dc.contributor.authorZou, Jin
dc.contributor.authorFickenscher, M A
dc.contributor.authorSmith, Leigh M
dc.contributor.authorJackson, Howard E
dc.contributor.authorYarrison-Rice, Jan M
dc.contributor.authorTan, Hark Hoe
dc.date.accessioned2015-12-07T22:41:08Z
dc.date.available2015-12-07T22:41:08Z
dc.identifier.issn0957-4484
dc.identifier.urihttp://hdl.handle.net/1885/24175
dc.description.abstractStraight, vertically aligned GaAs nanowires were grown on Si(111) substrates coated with thin GaAs buffer layers. We find that the V/III precursor ratio and growth temperature are crucial factors influencing the morphology and quality of buffer layers. A
dc.publisherInstitute of Physics Publishing
dc.sourceNanotechnology
dc.subjectKeywords: Buffer layer growth; Double layer structure; GaAs; High temperature; In-situ annealing; Low temperatures; Nanowire growth; Precursor ratios; Si substrates; Si(111) substrate; Structural and optical properties; V/III ratio; Vertically aligned; Buffer layer
dc.titleNovel growth and properties of GaAs nanowires on Si substrates
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume21
dc.date.issued2010
local.identifier.absfor020406 - Surfaces and Structural Properties of Condensed Matter
local.identifier.ariespublicationf2965xPUB31
local.identifier.ariespublicationU3488905xPUB2940
local.type.statusPublished Version
local.contributor.affiliationKang, Jung-Hyun, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationGao, Qiang, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJoyce, Hannah J, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationKim, Yong, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationChoi, D Y, Dong-A University
local.contributor.affiliationGuo, Yi N , University of Queensland
local.contributor.affiliationXu, Hongyi, University of Queensland
local.contributor.affiliationZou, Jin, University of Queensland
local.contributor.affiliationFickenscher, M A, University of Cincinnati
local.contributor.affiliationSmith, Leigh M , University of Cincinnati
local.contributor.affiliationJackson, Howard E , University of Cincinnati
local.contributor.affiliationYarrison-Rice, Jan M , University of Miami
local.bibliographicCitation.issue3
local.bibliographicCitation.startpage1
local.bibliographicCitation.lastpage6
local.identifier.doi10.1088/0957-4484/21/3/035604
local.identifier.absseo970102 - Expanding Knowledge in the Physical Sciences
dc.date.updated2016-02-24T08:27:11Z
local.identifier.scopusID2-s2.0-75249094308
local.identifier.thomsonID000272643000013
CollectionsANU Research Publications

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