Skip navigation
Skip navigation

Novel growth and properties of GaAs nanowires on Si substrates

Kang, Jung-Hyun; Gao, Qiang; Joyce, Hannah J; Tan, Hoe Hark; Jagadish, Chennupati; Kim, Yong; Choi, D Y; Guo, Yi N; Xu, Hongyi; Zou, Jin; Fickenscher, M A; Smith, Leigh M; Jackson, Howard E; Yarrison-Rice, Jan M


Straight, vertically aligned GaAs nanowires were grown on Si(111) substrates coated with thin GaAs buffer layers. We find that the V/III precursor ratio and growth temperature are crucial factors influencing the morphology and quality of buffer layers. A

CollectionsANU Research Publications
Date published: 2010
Type: Journal article
Source: Nanotechnology
DOI: 10.1088/0957-4484/21/3/035604


There are no files associated with this item.

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  20 July 2017/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator