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Novel growth and properties of GaAs nanowires on Si substrates

Kang, Jung-Hyun; Gao, Qiang; Joyce, Hannah J; Jagadish, Chennupati; Kim, Yong; Choi, D Y; Guo, Yi N; Xu, Hongyi; Zou, Jin; Fickenscher, M A; Smith, Leigh M; Jackson, Howard E; Yarrison-Rice, Jan M; Tan, Hark Hoe

Description

Straight, vertically aligned GaAs nanowires were grown on Si(111) substrates coated with thin GaAs buffer layers. We find that the V/III precursor ratio and growth temperature are crucial factors influencing the morphology and quality of buffer layers. A

CollectionsANU Research Publications
Date published: 2010
Type: Journal article
URI: http://hdl.handle.net/1885/24175
Source: Nanotechnology
DOI: 10.1088/0957-4484/21/3/035604

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