Novel growth and properties of GaAs nanowires on Si substrates
Kang, Jung-Hyun; Gao, Qiang; Joyce, Hannah J; Jagadish, Chennupati; Kim, Yong; Choi, Duk-Yong; Guo, Yi N; Xu, Hongyi; Zou, Jin; Fickenscher, M A; Smith, Leigh M; Jackson, Howard E; Yarrison-Rice, Jan M; Tan, Hark Hoe
Straight, vertically aligned GaAs nanowires were grown on Si(111) substrates coated with thin GaAs buffer layers. We find that the V/III precursor ratio and growth temperature are crucial factors influencing the morphology and quality of buffer layers. A
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