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Orientation Dependent Ion Beam Mixing of Ta/Si Interfaces

Berky, W; Gottschalk , S; Elliman, Robert; Balogh, A G

Description

Ta/Si interfaces were systematically studied concerning ion beam mixing effects. Tantalum was evaporated on silicon of (1 0 0) and (1 1 1) orientation using the molecular beam epitaxy (MBE) method. The samples were then irradiated with 1.85 MeV and 6 MeV

CollectionsANU Research Publications
Date published: 2006
Type: Journal article
URI: http://hdl.handle.net/1885/24036
Source: Nuclear Instruments and Methods in Physics Research: Section B
DOI: 10.1016/j.nimb.2006.03.114

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