Orientation Dependent Ion Beam Mixing of Ta/Si Interfaces
Ta/Si interfaces were systematically studied concerning ion beam mixing effects. Tantalum was evaporated on silicon of (1 0 0) and (1 1 1) orientation using the molecular beam epitaxy (MBE) method. The samples were then irradiated with 1.85 MeV and 6 MeV
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|Source:||Nuclear Instruments and Methods in Physics Research: Section B|
|01_Berky_Orientation_Dependent_Ion_Beam_2006.pdf||264.35 kB||Adobe PDF||Request a copy|
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