Stress and Stress Relief in Dielectric Thin Films - The Role of Hydrogen
Novel crack propagation modes are reported in amorphous silicon-rich oxide (SiOx) films deposited onto (1 0 0) silicon substrates and subjected to thermal annealing. These include the formation of straight cracks aligned with 〈0 0 1〉 directions in the
|Collections||ANU Research Publications|
|Source:||Nuclear Instruments and Methods in Physics Research: Section B|
|01_Elliman_Stress_and_Stress_Relief_in_2006.pdf||153.25 kB||Adobe PDF||Request a copy|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.