Stress and Stress Relief in Dielectric Thin Films - The Role of Hydrogen

Elliman, Robert; Dall (previously Weijers), Tessica; Spooner, M G; Kim, Tae-Hyun; Wilkinson, Andrew

doi:10.1016/j.nimb.2006.04.018

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Stress and Stress Relief in Dielectric Thin Films - The Role of Hydrogen

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Elliman, Robert; Dall (previously Weijers), Tessica; Spooner, M G; Kim, Tae-Hyun; Wilkinson, Andrew

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Novel crack propagation modes are reported in amorphous silicon-rich oxide (SiOx) films deposited onto (1 0 0) silicon substrates and subjected to thermal annealing. These include the formation of straight cracks aligned with 〈0 0 1〉 directions in the

Collections	ANU Research Publications
Date published:	2006
Type:	Journal article
URI:	http://hdl.handle.net/1885/23851
Source:	Nuclear Instruments and Methods in Physics Research: Section B
DOI:	10.1016/j.nimb.2006.04.018

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Stress and Stress Relief in Dielectric Thin Films - The Role of Hydrogen

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