Amorphous phase formation in ion implanted In x Ga 1- x As
The amorphisation kinetics of InxGa1-xAs alloys were investigated using Rutherford backscattering spectrometry in channelling configuration. Using metal organic chemical vapour deposition, epitaxial InxGa1-xAs layers were grown on either GaAs, InP or InAs over a wide range of stoichiometries. Ion implantation was then performed using 60 keV Ge ions at room temperature. In contrast with AlxGa1-xAs alloys, InxGa1-xAs does not exhibit amorphisation kinetics intermediate between the two binary...[Show more]
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|Source:||Nuclear Instruments and Methods in Physics Research: Section A|
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