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Amorphous phase formation in ion implanted In x Ga 1- x As

Hussain, Zohair; Wesch, Werner; Wendler, E; Ridgway, Mark C


The amorphisation kinetics of InxGa1-xAs alloys were investigated using Rutherford backscattering spectrometry in channelling configuration. Using metal organic chemical vapour deposition, epitaxial InxGa1-xAs layers were grown on either GaAs, InP or InAs over a wide range of stoichiometries. Ion implantation was then performed using 60 keV Ge ions at room temperature. In contrast with AlxGa1-xAs alloys, InxGa1-xAs does not exhibit amorphisation kinetics intermediate between the two binary...[Show more]

CollectionsANU Research Publications
Date published: 2007
Type: Journal article
Source: Nuclear Instruments and Methods in Physics Research: Section A
DOI: 10.1016/j.nimb.2007.01.058


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