PECVD Silicon Nitride Passivation on Boron Emitter: The Analysis of Electrostatic Charge on the Interface Properties
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Nursam, Natalita; Ren, Yongling; Weber, Klaus
Description
The dependence of surface recombination of boron diffused and undiffused silicon surfaces passivated with a-Si N x:H on the net charge density is investigated in detail. The films are deposited by plasma-enhanced chemical vapour deposition using a 2.45GHz microwave remote plasma system. The surface charge density on the samples is varied by depositing charge using a corona discharge chamber. Excess carrier lifetime, capacitance-voltage, and Kelvin probe measurements are combined to determine...[Show more]
Collections | ANU Research Publications |
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Date published: | 2010 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/23745 |
Source: | Advances in OptoElectronics |
DOI: | 10.1155/2010/487406 |
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File | Description | Size | Format | Image |
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01_Nursam_PECVD_Silicon_Nitride_2010.pdf | 851.24 kB | Adobe PDF | Request a copy |
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