Measuring the electronic structure of disordered overlayers by electron momentum spectroscopy: the Cu/Si interface
The Cu-Si interface was studied by electron momentum spectroscopy. A thick disordered interface is formed if one material is deposited on the other. Electron momentum spectroscopy measures intensity as a function of binding energy and target electron momentum. Momentum resolution is demonstrated to be very helpful in interpreting the data, even for these disordered interfaces. The interface layer has a well-defined electronic structure, different from either Si or Cu, and consistent with...[Show more]
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|Source:||Surface and Interface Analysis|
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