Investigation of interface properties in oxide passivated boron diffused silicon
Electron paramagnetic resonance (EPR) measurements were employed to observe the dominant defect at the thermally grown (1 1 1) Si-SiO2 interface, namely the Pb center, of samples with oxides grown at moderate temperatures. The presence of boron diffusion
|Collections||ANU Research Publications|
|Source:||Current Applied Physics|
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