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Investigation of interface properties in oxide passivated boron diffused silicon

Nursam, Natalita; Weber, Klaus; Jin, Hao; Ren, Yongling; Smith, Paul

Description

Electron paramagnetic resonance (EPR) measurements were employed to observe the dominant defect at the thermally grown (1 1 1) Si-SiO2 interface, namely the Pb center, of samples with oxides grown at moderate temperatures. The presence of boron diffusion

CollectionsANU Research Publications
Date published: 2010
Type: Journal article
URI: http://hdl.handle.net/1885/23562
Source: Current Applied Physics
DOI: 10.1016/j.cap.2010.02.053

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