Skip navigation
Skip navigation

SiOx Nanowires Grown via the Active Oxidation of Silicon

Shalav, Avi; Kim, Tae-Hyun; Elliman, Robert

Description

Amorphous, substoichiometric silica nanowires (NWs) can be grown on gold-coated silicon wafers by high-temperature annealing in an inert ambient with a low residual O2 partial pressure, consistent with conditions required for the active oxidation of the underlying Si substrate. The vapor precursor required for NW growth is volatile SiO obtained directly from the reaction between the substrate and the residual O2. This review summarizes the important elements of SiO}x NW growth under active...[Show more]

CollectionsANU Research Publications
Date published: 2011
Type: Journal article
URI: http://hdl.handle.net/1885/23530
Source: IEEE Journal on Selected Topics in Quantum Electronics
DOI: 10.1109/JSTQE.2010.2064288

Download

File Description SizeFormat Image
01_Shalav_SiOx_Nanowires_Grown_via_the_2011.pdf1.21 MBAdobe PDF    Request a copy


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  12 November 2018/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator