SiOx Nanowires Grown via the Active Oxidation of Silicon
Amorphous, substoichiometric silica nanowires (NWs) can be grown on gold-coated silicon wafers by high-temperature annealing in an inert ambient with a low residual O2 partial pressure, consistent with conditions required for the active oxidation of the underlying Si substrate. The vapor precursor required for NW growth is volatile SiO obtained directly from the reaction between the substrate and the residual O2. This review summarizes the important elements of SiO}x NW growth under active...[Show more]
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|Source:||IEEE Journal on Selected Topics in Quantum Electronics|
|01_Shalav_SiOx_Nanowires_Grown_via_the_2011.pdf||1.21 MB||Adobe PDF||Request a copy|
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