Schoenes, J; Withers, Raymond; Hulliger, F
Diamagnetic ThAsSe and ferromagnetic UAsSe display negative temperature coefficients of the electrical resistivity over extended temperature ranges. Electron-diffraction studies show that As-As dimerizations within the As layers cause this Kondo-like behavior in ThAsSe and do also contribute in UAsSe. We suggest that a coupling between neighboring As layers at the lowest temperatures may be at the origin of a second Kondo-like regime below ≈15 K.
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