Zou, Jin; Paladugu, Mohanchand; Wang, Hui; Auchterlonie, Graeme J; Guo, YaNan; Kim, Yong; Gao, Qiang; Joyce, Hannah J; Tan, Hoe Hark; Jagadish, Chennupati
The epitaxial growth mechanism of truncated triangular III-V GaAs nanowires by metal-organic chemical vapor deposition (MOCVD) technique was analyzed. The single-crystalline wafers with deposited Au nanoparticles were placed in a growth chamber and the nanowire growth was initiated by the flow of vapor reactants at the growth temperature. GaAs nanowires were grown on a (111)B GaAs substrates in a horizontal-flow MOCVD reactor at a pressure of 100 mbar. The MOCVD results show that the size of...[Show more]
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