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Accuracy of Interstitial Iron Measurements on P-Type Multicrystalline Silicon Blocks by Quasi-Steady-State Photoconductance

Goodarzi, Mohsen; Sinton, R.A.; Jin, Hao; Zheng, Peiting; Chen, Wei; Wang, Quanzhi; Macdonald, Daniel

Description

A detailed knowledge of the distributions of carrier lifetimes, impurities, and crystal defects in silicon ingots is key for understanding and improving wafer quality, as well as solar cell processing steps. In this work, we have validated the use of the quasi-steady-state photoconductance method on p-type multicrystalline silicon blocks to determine the interstitial iron concentration. The extracted iron concentrations along a silicon block were compared with the interstitial iron...[Show more]

dc.contributor.authorGoodarzi, Mohsen
dc.contributor.authorSinton, R.A.
dc.contributor.authorJin, Hao
dc.contributor.authorZheng, Peiting
dc.contributor.authorChen, Wei
dc.contributor.authorWang, Quanzhi
dc.contributor.authorMacdonald, Daniel
dc.date.accessioned2021-05-05T04:21:56Z
dc.identifier.issn2156-3381
dc.identifier.urihttp://hdl.handle.net/1885/231449
dc.description.abstractA detailed knowledge of the distributions of carrier lifetimes, impurities, and crystal defects in silicon ingots is key for understanding and improving wafer quality, as well as solar cell processing steps. In this work, we have validated the use of the quasi-steady-state photoconductance method on p-type multicrystalline silicon blocks to determine the interstitial iron concentration. The extracted iron concentrations along a silicon block were compared with the interstitial iron concentrations measured on wafers from different heights of an adjacent block. The lifetime measurements were performed on the block before and after flashing to break the iron–boron pairs. The impact of nonuniform carrier profiles during the block measurements on the extraction of the Fe profiles is discussed and quantified based on simulations of the quasi-steady-state measurement conditions. The simulation results reveal a slight error in the extracted interstitial iron concentration along the block. However, this error is generally less than 20% for iron concentrations below 1011 cm–3, which is typical in the central region of an ingot, and in any case, can be corrected for based on the modeling results.
dc.format.mimetypeapplication/pdf
dc.language.isoen_AU
dc.publisherIEEE
dc.rights© 2017 IEEE
dc.sourceIEEE Journal of Photovoltaics
dc.source.urihttps://ieeexplore.ieee.org/document/7964686
dc.subjectCarrier lifetime
dc.subjectiron concentration
dc.subjectquasisteady-state photoconductance (QSSPC)
dc.subjectsilicon block
dc.titleAccuracy of Interstitial Iron Measurements on P-Type Multicrystalline Silicon Blocks by Quasi-Steady-State Photoconductance
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume7
dc.date.issued2017
local.identifier.absfor091308 - Solid Mechanics
local.identifier.ariespublicationa383154xPUB7454
local.publisher.urlhttps://ieeexplore.ieee.org
local.type.statusPublished Version
local.contributor.affiliationGoodarzi, Mohsen, College of Engineering and Computer Science, ANU
local.contributor.affiliationSinton, R.A., Sinton Consulting
local.contributor.affiliationJin, Hao, JinkoSolar
local.contributor.affiliationZheng, Peiting, JinkoSolar
local.contributor.affiliationChen, Wei, JinkoSolar
local.contributor.affiliationWang, Quanzhi, JinkoSolar
local.contributor.affiliationMacDonald, Daniel, College of Engineering and Computer Science, ANU
local.description.embargo2099-12-31
local.bibliographicCitation.issue5
local.bibliographicCitation.startpage1216
local.bibliographicCitation.lastpage1223
local.identifier.doi10.1109/JPHOTOV.2017.2716785
dc.date.updated2020-11-23T10:09:34Z
local.identifier.scopusID2-s2.0-85023740075
local.identifier.thomsonID000408160700008
CollectionsANU Research Publications

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