Accuracy of Interstitial Iron Measurements on P-Type Multicrystalline Silicon Blocks by Quasi-Steady-State Photoconductance
A detailed knowledge of the distributions of carrier lifetimes, impurities, and crystal defects in silicon ingots is key for understanding and improving wafer quality, as well as solar cell processing steps. In this work, we have validated the use of the quasi-steady-state photoconductance method on p-type multicrystalline silicon blocks to determine the interstitial iron concentration. The extracted iron concentrations along a silicon block were compared with the interstitial iron...[Show more]
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|Source:||IEEE Journal of Photovoltaics|
|01_Goodarzi_Accuracy_of_Interstitial_Iron_2017.pdf||789.13 kB||Adobe PDF||Request a copy|
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