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Improved silicon surface passivation of APCVD Al2O3 by rapid thermal annealing

Black, Lachlan E; Allen, Thomas; McIntosh, Keith; Cuevas, Andres


Short-duration post-deposition thermal treatments at temperatures above those normally used for annealing activation have the potential to further improve the already excellent passivation of crystalline silicon (c-Si) achieved by Al2O3, but have so far received little attention. In this work we investigate the influence of rapid thermal annealing (RTA) on the surface passivation of c-Si by Al2O3 deposited by atmospheric pressure chemical vapour deposition (APCVD) as a function of RTA peak...[Show more]

CollectionsANU Research Publications
Date published: 2016
Type: Journal article
Source: Energy Procedia
DOI: 10.1016/j.egypro.2016.07.088
Access Rights: open access


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