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Determining the charge states and capture mechanisms of defects in silicon through accurate recombination analyses: A review

Rougieux, Fiacre E; Sun, Chang; Macdonald, Daniel

Description

A key strategy for further reducing the cost of solar electricity is through the development and production of very-high efficiency silicon solar cells (> 25%). The challenge in achieving this goal lies in overcoming limitations imposed by the electronic quality of the silicon wafers themselves. To overcome this challenge, it is necessary to understand the defects limiting the electronic quality of silicon wafers. In this review, we critically assess recent progress in understanding the...[Show more]

dc.contributor.authorRougieux, Fiacre E
dc.contributor.authorSun, Chang
dc.contributor.authorMacdonald, Daniel
dc.date.accessioned2021-04-06T03:44:46Z
dc.identifier.issn0927-0248
dc.identifier.urihttp://hdl.handle.net/1885/229666
dc.description.abstractA key strategy for further reducing the cost of solar electricity is through the development and production of very-high efficiency silicon solar cells (> 25%). The challenge in achieving this goal lies in overcoming limitations imposed by the electronic quality of the silicon wafers themselves. To overcome this challenge, it is necessary to understand the defects limiting the electronic quality of silicon wafers. In this review, we critically assess recent progress in understanding the recombination properties of defects in silicon and provide a nuanced and detailed picture of what constitutes accurate recombination parameters for such defects. Here we show that lifetime spectroscopy and capacitance spectroscopy analyses contain significant limitations, namely disregard of multivalent defect recombination in lifetime spectroscopy analyses, lack of exciton capture mechanisms in some deep level capacitance spectroscopy measurements and limitations in using detailed balance to extract capture parameters in capacitance spectroscopy. We demonstrate that combining multiple analyses leads to a more robust determination of recombination parameters. We use such combined analyses to review recombination pathways and parameters for technology relevant defects with the goal of enabling robust simulation of the lifetime in silicon for solar cell applications.
dc.format.mimetypeapplication/pdf
dc.language.isoen_AU
dc.publisherElsevier
dc.rights© 2018 Elsevier B.V.
dc.sourceSolar Energy Materials and Solar Cells
dc.subjectTemperature and Injection Dependent Lifetime
dc.subjectSpectroscopy
dc.subjectDeep Level Transient Spectroscopy
dc.subjectRecombination
dc.subjectCapture cross section
dc.subjectDefects
dc.subjectSilicon
dc.titleDetermining the charge states and capture mechanisms of defects in silicon through accurate recombination analyses: A review
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume187
dc.date.issued2018
local.identifier.absfor090605 - Photodetectors, Optical Sensors and Solar Cells
local.identifier.ariespublicationu4485658xPUB1455
local.publisher.urlhttps://www.elsevier.com/en-au
local.type.statusPublished Version
local.contributor.affiliationRougieux, Fiacre E, University of New South Wales
local.contributor.affiliationSun, Ryan, College of Engineering and Computer Science, ANU
local.contributor.affiliationMacDonald, Daniel, College of Engineering and Computer Science, ANU
local.description.embargo2099-12-31
local.bibliographicCitation.startpage263
local.bibliographicCitation.lastpage272
local.identifier.doi10.1016/j.solmat.2018.07.029
local.identifier.absseo850504 - Solar-Photovoltaic Energy
dc.date.updated2020-11-22T07:37:57Z
local.identifier.scopusID2-s2.0-85051959660
local.identifier.thomsonID000445308300032
CollectionsANU Research Publications

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