Epitaxial Germanium Nanowires on GaAs Grown by Chemical Vapor Deposition
We successfully synthesized epitaxial Ge nanowires on GaAs (100) and GaAs (111)B substrates by using Au-nanoparticle-catalyzed chemical vapor deposition. From an analysis of the inclined angles of the Ge nanowires to the substrate normal, we find that the epitaxial Ge nanowires grow along the 〈110〉 directions regardless of the substrate's orientation. This is in contrast with epitaxial Ge nanowires on Si and Ge substrates, which grow predominantly along the 〈111〉 direction. In addition,...[Show more]
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|Source:||Journal of the Korean Physical Society|
|01_Kim_Epitaxial_Germanium_Nanowires_2007.pdf||1.38 MB||Adobe PDF||Request a copy|
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