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Gettering of transition metals in high-performance multicrystalline silicon by silicon nitride films and phosphorus diffusion

Liu, AnYao; Sun, Chang; Sio, Hang Cheong (Kelvin); Zhang, Xinyu; Jin, Hao; Macdonald, Daniel

Description

High-performance multicrystalline silicon (HP mc-Si) from directional solidification has become the mainstream industrial material for fabricating mc-Si based solar cells for photovoltaic applications. Transition metal impurities are inherently contained in HP mc-Si during ingot growth, and they are one of the major efficiency-limiting drawbacks. In this work, we investigate the gettering of transition metals (Cu, Ni, Fe, and Cr) in HP mc-Si wafers along an industrial-standard p-type HP mc-Si...[Show more]

dc.contributor.authorLiu, AnYao
dc.contributor.authorSun, Chang
dc.contributor.authorSio, Hang Cheong (Kelvin)
dc.contributor.authorZhang, Xinyu
dc.contributor.authorJin, Hao
dc.contributor.authorMacdonald, Daniel
dc.date.accessioned2021-03-25T22:23:18Z
dc.date.available2021-03-25T22:23:18Z
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/1885/227814
dc.description.abstractHigh-performance multicrystalline silicon (HP mc-Si) from directional solidification has become the mainstream industrial material for fabricating mc-Si based solar cells for photovoltaic applications. Transition metal impurities are inherently contained in HP mc-Si during ingot growth, and they are one of the major efficiency-limiting drawbacks. In this work, we investigate the gettering of transition metals (Cu, Ni, Fe, and Cr) in HP mc-Si wafers along an industrial-standard p-type HP mc-Si ingot, via examining the metal concentration and distribution in the near-surface gettering layers using secondary ion mass spectrometry. We applied both conventional phosphorus diffusion gettering and the recently developed silicon nitride (from plasma-enhanced chemical vapour deposition) gettering techniques. Both techniques are shown to remove significant quantities of metals from the silicon wafer bulk to the surface gettering layers. Improvements in the bulk minority carrier lifetimes throughout the ingot height are also observed by lifetime measurements and spatially-resolved photoluminescence imaging. The gettered Cu and Ni concentrations, as well as the as-grown dissolved Fe concentrations in the silicon wafer bulk, along the HP mc-Si ingot height are shown to follow a similar concentration profile as the metals in conventional mc-Si ingots.
dc.description.sponsorshipThis work has been supported by the Australian Renewable Energy Agency (ARENA) through Project No. RND017. The authors A. Y. Liu and H. C. Sio are also supported by the ARENA Australian Centre for Advanced Photovoltaics (ACAP) Postdoctoral Research Fellowship scheme.
dc.format.mimetypeapplication/pdf
dc.language.isoen_AU
dc.publisherAmerican Institute of Physics (AIP)
dc.rights© 2019 American Institute of Physics
dc.sourceJournal of Applied Physics
dc.titleGettering of transition metals in high-performance multicrystalline silicon by silicon nitride films and phosphorus diffusion
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume125
dc.date.issued2019-01-28
local.identifier.absfor090605 - Photodetectors, Optical Sensors and Solar Cells
local.identifier.ariespublicationu3102795xPUB688
local.publisher.urlhttp://jap.aip.org/
local.type.statusPublished Version
local.contributor.affiliationLiu, Anyao, College of Engineering and Computer Science, ANU
local.contributor.affiliationSun, Ryan, College of Engineering and Computer Science, ANU
local.contributor.affiliationSio, Hang Cheong (Kelvin), College of Engineering and Computer Science, ANU
local.contributor.affiliationZhang, Xinyu, R&D Center Jinko Solar
local.contributor.affiliationJin, Hao, JinkoSolar
local.contributor.affiliationMacDonald, Daniel, College of Engineering and Computer Science, ANU
local.bibliographicCitation.issue4
local.bibliographicCitation.startpage043103-1
local.bibliographicCitation.lastpage043103-10
local.identifier.doi10.1063/1.5050566
local.identifier.absseo850504 - Solar-Photovoltaic Energy
dc.date.updated2020-11-22T07:23:12Z
local.identifier.scopusID2-s2.0-85060801674
dcterms.accessRightsOpen Access
dc.provenancehttps://v2.sherpa.ac.uk/id/publication/9867..."The Published Version can be archived in Institutional Repository. 12 months embargo" from SHERPA/RoMEO site (as at 25/03/2021).
CollectionsANU Research Publications

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