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Gettering of transition metals in high-performance multicrystalline silicon by silicon nitride films and phosphorus diffusion

Liu, AnYao; Sun, Chang; Sio, Hang Cheong (Kelvin); Zhang, Xinyu; Jin, Hao; Macdonald, Daniel

Description

High-performance multicrystalline silicon (HP mc-Si) from directional solidification has become the mainstream industrial material for fabricating mc-Si based solar cells for photovoltaic applications. Transition metal impurities are inherently contained in HP mc-Si during ingot growth, and they are one of the major efficiency-limiting drawbacks. In this work, we investigate the gettering of transition metals (Cu, Ni, Fe, and Cr) in HP mc-Si wafers along an industrial-standard p-type HP mc-Si...[Show more]

CollectionsANU Research Publications
Date published: 2019-01-28
Type: Journal article
URI: http://hdl.handle.net/1885/227814
Source: Journal of Applied Physics
DOI: 10.1063/1.5050566
Access Rights: Open Access

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