Gettering Effects of Silicon Nitride Films from Various Plasma-Enhanced Chemical Vapor Deposition Conditions
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Liu, AnYao; Hameiri, Ziv; Wan, Yimao; Sun, Chang; Macdonald, Daniel
Description
This paper investigates and compares the impurity gettering effects of silicon nitride (SiNx) films that are synthesized by plasma-enhanced chemical vapor deposition (PECVD) under various conditions. Both industrial- and laboratory-scale PECVD systems are employed to deposit SiNx films with a wide range of properties (with refractive indices from 1.93 to 2.45 at 632 nm), which covers the entire range of SiNx used for silicon solar cells. The gettering effects are quantified by monitoring the...[Show more]
dc.contributor.author | Liu, AnYao | |
---|---|---|
dc.contributor.author | Hameiri, Ziv | |
dc.contributor.author | Wan, Yimao | |
dc.contributor.author | Sun, Chang | |
dc.contributor.author | Macdonald, Daniel | |
dc.date.accessioned | 2021-03-24T22:53:15Z | |
dc.identifier.issn | 2156-3381 | |
dc.identifier.uri | http://hdl.handle.net/1885/227771 | |
dc.description.abstract | This paper investigates and compares the impurity gettering effects of silicon nitride (SiNx) films that are synthesized by plasma-enhanced chemical vapor deposition (PECVD) under various conditions. Both industrial- and laboratory-scale PECVD systems are employed to deposit SiNx films with a wide range of properties (with refractive indices from 1.93 to 2.45 at 632 nm), which covers the entire range of SiNx used for silicon solar cells. The gettering effects are quantified by monitoring the reduction kinetics of the interstitial iron concentration in the silicon wafer bulk as iron becomes gettered to the surface SiNx layers during cumulative annealing at 400 °C. The results show that the very different SiNx films generate similar gettering kinetics, indicating that the impurity gettering effect is likely present in most PECVD SiNx films for silicon solar cells. The gettering kinetics and the SiNx film properties of refractive index, Si-N, Si-H, N-H bond densities, and H content, are found to have no clear correlations. | |
dc.description.sponsorship | The work of A. Liu and Y. Wan was supported by the ARENA ACAP postdoctoral fellowship scheme. The work of Z. Hameiri was supported by the Australian Research Council through the Discovery Early Career Researcher Award under Project DE150100268. | |
dc.format.mimetype | application/pdf | |
dc.language.iso | en_AU | |
dc.publisher | IEEE | |
dc.rights | © 2018 IEEE | |
dc.source | IEEE Journal of Photovoltaics | |
dc.title | Gettering Effects of Silicon Nitride Films from Various Plasma-Enhanced Chemical Vapor Deposition Conditions | |
dc.type | Journal article | |
local.description.notes | Imported from ARIES | |
local.identifier.citationvolume | 9 | |
dc.date.issued | 2019 | |
local.identifier.absfor | 090605 - Photodetectors, Optical Sensors and Solar Cells | |
local.identifier.ariespublication | u3102795xPUB388 | |
local.type.status | Published Version | |
local.contributor.affiliation | Liu, Anyao, College of Engineering and Computer Science, ANU | |
local.contributor.affiliation | Hameiri, Ziv, University of New South Wales | |
local.contributor.affiliation | Wan, Yimao, College of Engineering and Computer Science, ANU | |
local.contributor.affiliation | Sun, Ryan, College of Engineering and Computer Science, ANU | |
local.contributor.affiliation | MacDonald, Daniel, College of Engineering and Computer Science, ANU | |
local.description.embargo | 2099-12-31 | |
dc.relation | http://purl.org/au-research/grants/arc/DE150100268 | |
local.bibliographicCitation.issue | 1 | |
local.bibliographicCitation.startpage | 78 | |
local.bibliographicCitation.lastpage | 81 | |
local.identifier.doi | 10.1109/JPHOTOV.2018.2875871 | |
local.identifier.absseo | 850504 - Solar-Photovoltaic Energy | |
dc.date.updated | 2020-11-22T07:22:36Z | |
local.identifier.scopusID | 2-s2.0-85055704626 | |
Collections | ANU Research Publications |
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