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Gettering Effects of Silicon Nitride Films from Various Plasma-Enhanced Chemical Vapor Deposition Conditions

Liu, AnYao; Hameiri, Ziv; Wan, Yimao; Sun, Chang; Macdonald, Daniel

Description

This paper investigates and compares the impurity gettering effects of silicon nitride (SiNx) films that are synthesized by plasma-enhanced chemical vapor deposition (PECVD) under various conditions. Both industrial- and laboratory-scale PECVD systems are employed to deposit SiNx films with a wide range of properties (with refractive indices from 1.93 to 2.45 at 632 nm), which covers the entire range of SiNx used for silicon solar cells. The gettering effects are quantified by monitoring the...[Show more]

dc.contributor.authorLiu, AnYao
dc.contributor.authorHameiri, Ziv
dc.contributor.authorWan, Yimao
dc.contributor.authorSun, Chang
dc.contributor.authorMacdonald, Daniel
dc.date.accessioned2021-03-24T22:53:15Z
dc.identifier.issn2156-3381
dc.identifier.urihttp://hdl.handle.net/1885/227771
dc.description.abstractThis paper investigates and compares the impurity gettering effects of silicon nitride (SiNx) films that are synthesized by plasma-enhanced chemical vapor deposition (PECVD) under various conditions. Both industrial- and laboratory-scale PECVD systems are employed to deposit SiNx films with a wide range of properties (with refractive indices from 1.93 to 2.45 at 632 nm), which covers the entire range of SiNx used for silicon solar cells. The gettering effects are quantified by monitoring the reduction kinetics of the interstitial iron concentration in the silicon wafer bulk as iron becomes gettered to the surface SiNx layers during cumulative annealing at 400 °C. The results show that the very different SiNx films generate similar gettering kinetics, indicating that the impurity gettering effect is likely present in most PECVD SiNx films for silicon solar cells. The gettering kinetics and the SiNx film properties of refractive index, Si-N, Si-H, N-H bond densities, and H content, are found to have no clear correlations.
dc.description.sponsorshipThe work of A. Liu and Y. Wan was supported by the ARENA ACAP postdoctoral fellowship scheme. The work of Z. Hameiri was supported by the Australian Research Council through the Discovery Early Career Researcher Award under Project DE150100268.
dc.format.mimetypeapplication/pdf
dc.language.isoen_AU
dc.publisherIEEE
dc.rights© 2018 IEEE
dc.sourceIEEE Journal of Photovoltaics
dc.titleGettering Effects of Silicon Nitride Films from Various Plasma-Enhanced Chemical Vapor Deposition Conditions
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume9
dc.date.issued2019
local.identifier.absfor090605 - Photodetectors, Optical Sensors and Solar Cells
local.identifier.ariespublicationu3102795xPUB388
local.type.statusPublished Version
local.contributor.affiliationLiu, Anyao, College of Engineering and Computer Science, ANU
local.contributor.affiliationHameiri, Ziv, University of New South Wales
local.contributor.affiliationWan, Yimao, College of Engineering and Computer Science, ANU
local.contributor.affiliationSun, Ryan, College of Engineering and Computer Science, ANU
local.contributor.affiliationMacDonald, Daniel, College of Engineering and Computer Science, ANU
local.description.embargo2099-12-31
dc.relationhttp://purl.org/au-research/grants/arc/DE150100268
local.bibliographicCitation.issue1
local.bibliographicCitation.startpage78
local.bibliographicCitation.lastpage81
local.identifier.doi10.1109/JPHOTOV.2018.2875871
local.identifier.absseo850504 - Solar-Photovoltaic Energy
dc.date.updated2020-11-22T07:22:36Z
local.identifier.scopusID2-s2.0-85055704626
CollectionsANU Research Publications

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