Gettering Effects of Silicon Nitride Films from Various Plasma-Enhanced Chemical Vapor Deposition Conditions
This paper investigates and compares the impurity gettering effects of silicon nitride (SiNx) films that are synthesized by plasma-enhanced chemical vapor deposition (PECVD) under various conditions. Both industrial- and laboratory-scale PECVD systems are employed to deposit SiNx films with a wide range of properties (with refractive indices from 1.93 to 2.45 at 632 nm), which covers the entire range of SiNx used for silicon solar cells. The gettering effects are quantified by monitoring the...[Show more]
|Collections||ANU Research Publications|
|Source:||IEEE Journal of Photovoltaics|
|01_Liu_Gettering_Effects_of_Silicon_2019.pdf||1.14 MB||Adobe PDF||Request a copy|
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