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The state filling effect in p-doped InGaAs/GaAs quantum dots

Wen, XiaoMing; Dao, Lap Van; Hannaford, Peter; Mokkapati, Sudha; Jagadish, Chennupati; Tan, Hark Hoe


The electron dynamics in modulation p-doped InGaAs/GaAs self-assembled quantum dots have been studied by time-integrated and time-resolved up-conversion photoluminescence. A significant state filling effect is observed with exclusion of the phonon bottleneck effect. The rise time and decay time are found to vary with the excitation intensity for the ground state and excited states of the quantum dots. In the low intensity regime the rise time decreases with increasing excitation intensity...[Show more]

CollectionsANU Research Publications
Date published: 2007
Type: Journal article
Source: Journal of Physics: Condensed Matter
DOI: 10.1088/0953-8984/19/38/386213


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