Investigation of Lifetime Degradation of RIE-Processed Silicon Samples for Solar Cells
-
Altmetric Citations
Zin, Ngwe Soe; Weber, Klaus; Zhang, Chun; Blakers, Andrew
Description
Reactive Ion Etching (RIE) is observed to cause substantial effective carrier lifetime degradation in silicon wafers. Degradation of lifetime is permanent for samples where RIE etches into silicon, while the lifetime degradation is temporary for samples where RIE etches only dielectric layers of SiO2 grown on the wafer. The degradation of the effective lifetime of RIE-etched silicon samples can be minimized by exposing only a few percent of the wafer to the etch.
Collections | ANU Research Publications |
---|---|
Date published: | 2009 |
Type: | Conference paper |
URI: | http://hdl.handle.net/1885/22188 |
Source: | Proceedings of IEEE Photovoltaic Specialists Conference (PVSC 2009) |
DOI: | 10.1109/PVSC.2009.5411762 |
Download
File | Description | Size | Format | Image |
---|---|---|---|---|
01_Zin_Investigation_of_Lifetime_2009.pdf | 615.24 kB | Adobe PDF | Request a copy |
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.
Updated: 19 May 2020/ Responsible Officer: University Librarian/ Page Contact: Library Systems & Web Coordinator