Skip navigation
Skip navigation

Investigation of Lifetime Degradation of RIE-Processed Silicon Samples for Solar Cells

Zin, Ngwe Soe; Weber, Klaus; Zhang, Chun; Blakers, Andrew

Description

Reactive Ion Etching (RIE) is observed to cause substantial effective carrier lifetime degradation in silicon wafers. Degradation of lifetime is permanent for samples where RIE etches into silicon, while the lifetime degradation is temporary for samples where RIE etches only dielectric layers of SiO2 grown on the wafer. The degradation of the effective lifetime of RIE-etched silicon samples can be minimized by exposing only a few percent of the wafer to the etch.

CollectionsANU Research Publications
Date published: 2009
Type: Conference paper
URI: http://hdl.handle.net/1885/22188
Source: Proceedings of IEEE Photovoltaic Specialists Conference (PVSC 2009)
DOI: 10.1109/PVSC.2009.5411762

Download

File Description SizeFormat Image
01_Zin_Investigation_of_Lifetime_2009.pdf615.24 kBAdobe PDF    Request a copy


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  20 July 2017/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator