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Optical spectroscopy of Er doped Si-nanocrystals on sapphire substrates fabricated by ion-implantation into SiO2

Hylton, N. P.; Crowe, I. F.; Knights, Andrew P; Halsall, M. P.; Ruffell, Simon; Gwilliam, R

Description

We present the results of an optical investigation of a series of Er doped silicon nanocrystal (Si-NC) samples which were fabricated via ion implantation into SiO2 on sapphire substrates, followed by a range of rapid thermal processing. The photoluminescence spectra of the Si-NC emission revealed an increase in luminescence intensity and a red-shift of the peak wavelength as a function of annealing conditions. We attribute the former effect to the reduction of implantation induced defects with...[Show more]

CollectionsANU Research Publications
Date published: 2010
Type: Conference paper
URI: http://hdl.handle.net/1885/218763
Source: Silicon Photonics V: Proceedings of the Society of Photo-optical Instrumentation Engineers
DOI: 10.1117/12.852922

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