Optical spectroscopy of Er doped Si-nanocrystals on sapphire substrates fabricated by ion-implantation into SiO2
We present the results of an optical investigation of a series of Er doped silicon nanocrystal (Si-NC) samples which were fabricated via ion implantation into SiO2 on sapphire substrates, followed by a range of rapid thermal processing. The photoluminescence spectra of the Si-NC emission revealed an increase in luminescence intensity and a red-shift of the peak wavelength as a function of annealing conditions. We attribute the former effect to the reduction of implantation induced defects with...[Show more]
|Collections||ANU Research Publications|
|Source:||Silicon Photonics V: Proceedings of the Society of Photo-optical Instrumentation Engineers|
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