Strong Amplified Spontaneous Emission from High Quality GaAs1-xSbx Single Quantum Well Nanowires
Quantum confinement in semiconductor nanowires is of contemporary interest. Enhancing the quantum efficiency of quantum wells in nanowires and minimizing intrinsic absorption are necessary for reducing the threshold of nanowire lasers and are promising for wavelength tunable emitters and detectors. Here, we report on growth and optimization of GaAs1-xSbx/Al1-yGayAs quantum well heterostructures formed radially around pure zinc blende GaAs core nanowires. The emitted photon energy from...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Physical Chemistry C|
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