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Quantification of germanium-induced suppression of interstitial injection during oxidation of silicon

Martin, Thomas P.; Jones, K S; Camillo-Castillo, Renata A.; Hatem, C.; Xin, Yan; Elliman, Rob

Description

The oxidation of silicon is known to inject interstitials, and the presence of silicon–germanium (SiGe) alloys at the Si/SiO2 interface during oxidation is known to suppress the injection of silicon self-interstitials. This study uses a layer of implantation-induced dislocation loops to measure interstitial injection as a function of SiGe layer thickness. The loops were introduced by a 50 keV 2 × 1014 cm−2 P+ room-temperature implantation and thermal annealing. Germanium was subsequently...[Show more]

CollectionsANU Research Publications
Date published: 2017
Type: Journal article
URI: http://hdl.handle.net/1885/218343
Source: Journal of Materials Science
DOI: 10.1007/s10853-017-1196-1

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