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Photoluminescence Spectra of Moderately Doped, Compensated Silicon Si:P,B at 79-300 K

Liu, Anyao; Nguyen, Hieu; MacDonald, Daniel

Description

Photoluminescence (PL) spectra from moderately doped, compensated silicon with boron and phosphorus concentrations on the order of 1016 - 1017 cm-3, which is representative of the low-cost upgraded metallurgical grade silicon potentially used for photovoltaics, are presented and explained. At 79 K, the captured PL spectra from the compensated silicon reveal the presence of the following radiative recombination channels in the material: band-to-band recombination, recombination through a single...[Show more]

dc.contributor.authorLiu, Anyao
dc.contributor.authorNguyen, Hieu
dc.contributor.authorMacDonald, Daniel
dc.date.accessioned2020-12-20T20:57:34Z
dc.date.available2020-12-20T20:57:34Z
dc.identifier.issn2156-3381
dc.identifier.urihttp://hdl.handle.net/1885/218308
dc.description.abstractPhotoluminescence (PL) spectra from moderately doped, compensated silicon with boron and phosphorus concentrations on the order of 1016 - 1017 cm-3, which is representative of the low-cost upgraded metallurgical grade silicon potentially used for photovoltaics, are presented and explained. At 79 K, the captured PL spectra from the compensated silicon reveal the presence of the following radiative recombination channels in the material: band-to-band recombination, recombination through a single neutral dopant (phosphorus or boron), and recombination from the neutral donors (phosphorus) to the neutral acceptors (boron), i.e., theD°-A° pair recombination. TheD°-A° pair luminescence peaks are found to appear as rather broad in the measured PL spectra from compensated silicon at 79 K. The relative PL intensity of the broad dopant features is shown to increase with increasing dopant concentrations. The dopant-related luminescence of the compensated silicon demonstrates strong excitation dependence, as a result of the D°-A° recombination channel in compensated silicon. The dopant features become increasingly suppressed at higher excitations due to the increasing dominance of the band-to-band recombination channel.With increasing temperature, the dopant-related luminescence features diminish and become undistinguishable at around 200 K, due to the increased ionization of dopants and the broadening of the band-to-band recombination peaks at higher temperatures
dc.format.mimetypeapplication/pdf
dc.language.isoen_AU
dc.publisherIEEE
dc.sourceIEEE Journal of Photovoltaics
dc.titlePhotoluminescence Spectra of Moderately Doped, Compensated Silicon Si:P,B at 79-300 K
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume7
dc.date.issued2017
local.identifier.absfor090605 - Photodetectors, Optical Sensors and Solar Cells
local.identifier.ariespublicationa383154xPUB6360
local.type.statusPublished Version
local.contributor.affiliationLiu, Anyao, College of Engineering and Computer Science, ANU
local.contributor.affiliationNguyen, Hieu, College of Engineering and Computer Science, ANU
local.contributor.affiliationMacDonald, Daniel, College of Engineering and Computer Science, ANU
local.bibliographicCitation.issue2
local.bibliographicCitation.startpage581
local.bibliographicCitation.lastpage589
local.identifier.doi10.1109/JPHOTOV.2016.2641302
dc.date.updated2020-11-23T10:56:27Z
local.identifier.scopusID2-s2.0-85010015228
local.identifier.thomsonID000399991500025
CollectionsANU Research Publications

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