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Oxygen diffusion in TiO 2 films studied by electron and ion Rutherford backscattering

Marmitt, G.G.; Nandi, Sanjoy; Venkatachalam, Dinesh; Elliman, Rob; Vos, Maarten; Grande, P L

Description

The diffusivity of oxygen in thin, sputter-deposited TiO2 films, as can be used in RRAMs, is measured using electron and ion backscattering techniques. The as-grown sample consisted of two layers (Ti16O2 and Ti18O2) and was annealed between 500 °C and 900 °C. The depth profiles of 18O, as measured with both techniques, were similar. The extent of diffusion was much larger than expected from the literature data for O diffusion in single-crystal rutile, suggesting that defects in the...[Show more]

dc.contributor.authorMarmitt, G.G.
dc.contributor.authorNandi, Sanjoy
dc.contributor.authorVenkatachalam, Dinesh
dc.contributor.authorElliman, Rob
dc.contributor.authorVos, Maarten
dc.contributor.authorGrande, P L
dc.date.accessioned2020-12-20T20:57:32Z
dc.date.available2020-12-20T20:57:32Z
dc.identifier.issn0040-6090
dc.identifier.urihttp://hdl.handle.net/1885/218298
dc.description.abstractThe diffusivity of oxygen in thin, sputter-deposited TiO2 films, as can be used in RRAMs, is measured using electron and ion backscattering techniques. The as-grown sample consisted of two layers (Ti16O2 and Ti18O2) and was annealed between 500 °C and 900 °C. The depth profiles of 18O, as measured with both techniques, were similar. The extent of diffusion was much larger than expected from the literature data for O diffusion in single-crystal rutile, suggesting that defects in the sputter-deposited film play an essential role in the diffusion process
dc.format.mimetypeapplication/pdf
dc.language.isoen_AU
dc.publisherElsevier
dc.sourceThin Solid Films
dc.titleOxygen diffusion in TiO 2 films studied by electron and ion Rutherford backscattering
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume629
dc.date.issued2017
local.identifier.absfor020201 - Atomic and Molecular Physics
local.identifier.ariespublicationa383154xPUB5700
local.type.statusPublished Version
local.contributor.affiliationMarmitt, G.G., Instituto de Fisica da Universidade Federal do Rio Grande do Sul
local.contributor.affiliationNandi, Sanjoy, College of Science, ANU
local.contributor.affiliationVenkatachalam, Dinesh, College of Science, ANU
local.contributor.affiliationElliman, Rob, College of Science, ANU
local.contributor.affiliationVos, Maarten, College of Science, ANU
local.contributor.affiliationGrande, P L , Instituto de Fisica da Universidade Federal do Rio Grande do Sul
local.bibliographicCitation.startpage97
local.bibliographicCitation.lastpage102
local.identifier.doi10.1016/j.tsf.2017.03.024
dc.date.updated2020-11-23T10:55:03Z
local.identifier.scopusID2-s2.0-85016984271
local.identifier.thomsonID000401079700014
CollectionsANU Research Publications

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