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Oxygen diffusion in TiO 2 films studied by electron and ion Rutherford backscattering

Marmitt, G.G.; Nandi, Sanjoy; Venkatachalam, Dinesh; Elliman, Rob; Vos, Maarten; Grande, P L


The diffusivity of oxygen in thin, sputter-deposited TiO2 films, as can be used in RRAMs, is measured using electron and ion backscattering techniques. The as-grown sample consisted of two layers (Ti16O2 and Ti18O2) and was annealed between 500 °C and 900 °C. The depth profiles of 18O, as measured with both techniques, were similar. The extent of diffusion was much larger than expected from the literature data for O diffusion in single-crystal rutile, suggesting that defects in the...[Show more]

CollectionsANU Research Publications
Date published: 2017
Type: Journal article
Source: Thin Solid Films
DOI: 10.1016/j.tsf.2017.03.024


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