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Microscopic Distributions of Defect Luminescence from Subgrain Boundaries in Multicrystalline Silicon Wafers

Nguyen, Hieu; Jensen, Mallory Ann; Li, Li; Samundsett, Christian; Sio, Hang Cheong (Kelvin); Lai, Barry; Buonassisi, Tonio; MacDonald, Daniel

Description

We investigate the microscopic distributions of sub-band-gap luminescence emission (the so-called D-lines D1/D2/D3/D4) and the band-to-band luminescence intensity, near recombination-active subgrain boundaries in multicrystalline silicon wafers for solar cells. We find that the sub-band-gap luminescence from decorating defects/impurities (D1/D2) and from intrinsic dislocations (D3/D4) has distinctly different spatial distributions, and is asymmetric across the subgrain boundaries. The presence...[Show more]

dc.contributor.authorNguyen, Hieu
dc.contributor.authorJensen, Mallory Ann
dc.contributor.authorLi, Li
dc.contributor.authorSamundsett, Christian
dc.contributor.authorSio, Hang Cheong (Kelvin)
dc.contributor.authorLai, Barry
dc.contributor.authorBuonassisi, Tonio
dc.contributor.authorMacDonald, Daniel
dc.date.accessioned2020-12-20T20:57:18Z
dc.date.available2020-12-20T20:57:18Z
dc.identifier.issn2156-3381
dc.identifier.urihttp://hdl.handle.net/1885/218224
dc.description.abstractWe investigate the microscopic distributions of sub-band-gap luminescence emission (the so-called D-lines D1/D2/D3/D4) and the band-to-band luminescence intensity, near recombination-active subgrain boundaries in multicrystalline silicon wafers for solar cells. We find that the sub-band-gap luminescence from decorating defects/impurities (D1/D2) and from intrinsic dislocations (D3/D4) has distinctly different spatial distributions, and is asymmetric across the subgrain boundaries. The presence of D1/D2 is correlated with a strong reduction in the band-to-band luminescence, indicating a higher recombination activity. In contrast, D3/D4 emissions are not strongly correlated with the band-to-band intensity. Based on spatially resolved, synchrotron-based micro-X-ray fluorescence measurements of metal impurities, we confirm that high densities of metal impurities are present at locations with strong D1/D2 emission but low D3/D4 emission. Finally, we show that the observed asymmetry of the sub-band-gap luminescence across the subgrain boundaries is due to its inclination below the wafer surface. Based on the luminescence asymmetries, the subgrain boundaries are shown to share a common inclination locally, rather than being orientated randomly
dc.format.mimetypeapplication/pdf
dc.language.isoen_AU
dc.publisherIEEE
dc.sourceIEEE Journal of Photovoltaics
dc.titleMicroscopic Distributions of Defect Luminescence from Subgrain Boundaries in Multicrystalline Silicon Wafers
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume7
dc.date.issued2017
local.identifier.absfor090605 - Photodetectors, Optical Sensors and Solar Cells
local.identifier.ariespublicationa383154xPUB6146
local.type.statusPublished Version
local.contributor.affiliationNguyen, Hieu, College of Engineering and Computer Science, ANU
local.contributor.affiliationJensen, Mallory Ann, Massachusetts Institute of Technology
local.contributor.affiliationLi, Li, Argonne National Laboratory
local.contributor.affiliationSamundsett, Christian, College of Engineering and Computer Science, ANU
local.contributor.affiliationSio, Hang Cheong (Kelvin), College of Engineering and Computer Science, ANU
local.contributor.affiliationLai, Barry, Argonne National Laboratory
local.contributor.affiliationBuonassisi, Tonio, Massachusetts Institute of Technology
local.contributor.affiliationMacDonald, Daniel, College of Engineering and Computer Science, ANU
local.bibliographicCitation.issue3
local.bibliographicCitation.startpage772
local.bibliographicCitation.lastpage780
local.identifier.doi10.1109/JPHOTOV.2017.2684904
dc.date.updated2020-11-23T10:49:20Z
local.identifier.scopusID2-s2.0-85017123715
local.identifier.thomsonID000399992000008
CollectionsANU Research Publications

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