Microscopic Distributions of Defect Luminescence from Subgrain Boundaries in Multicrystalline Silicon Wafers
We investigate the microscopic distributions of sub-band-gap luminescence emission (the so-called D-lines D1/D2/D3/D4) and the band-to-band luminescence intensity, near recombination-active subgrain boundaries in multicrystalline silicon wafers for solar cells. We find that the sub-band-gap luminescence from decorating defects/impurities (D1/D2) and from intrinsic dislocations (D3/D4) has distinctly different spatial distributions, and is asymmetric across the subgrain boundaries. The presence...[Show more]
|Collections||ANU Research Publications|
|Source:||IEEE Journal of Photovoltaics|
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