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Growth of Oxygen Precipitates and Dislocations in Czochralski Silicon

Rougieux, Fiacre; Nguyen, Hieu; MacDonald, Daniel; Mitchell, Bernhard; Falster, Robert J.


The impact of oxygen precipitates and dislocations on carrier recombination is investigated on thick silicon slabs cut vertically from a Czochralski-grown silicon ingot. Using a combination of photoluminescence imaging, photoluminescence spectroscopy, and Fourier transform infrared spectroscopy, we investigate the impact of pre-anneal on their recombination activity. We show that the vacancy concentration during precipitate growth affects the recombination activity of oxygen precipitates....[Show more]

CollectionsANU Research Publications
Date published: 2017
Type: Journal article
Source: IEEE Journal of Photovoltaics
DOI: 10.1109/JPHOTOV.2017.2678840


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