Growth of Oxygen Precipitates and Dislocations in Czochralski Silicon
The impact of oxygen precipitates and dislocations on carrier recombination is investigated on thick silicon slabs cut vertically from a Czochralski-grown silicon ingot. Using a combination of photoluminescence imaging, photoluminescence spectroscopy, and Fourier transform infrared spectroscopy, we investigate the impact of pre-anneal on their recombination activity. We show that the vacancy concentration during precipitate growth affects the recombination activity of oxygen precipitates....[Show more]
|Collections||ANU Research Publications|
|Source:||IEEE Journal of Photovoltaics|
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