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Elimination and quantification of oxidation induced interstitial injection via Ge implants

Martin, Thomas P.; Jones, K S; Camillo-Castillo, Renata A.; Hatem, C.; Xin, Yan; Elliman, Rob

Description

The presence of Silicon-Germanium (SiGe) alloys at the Si/SiO2 interface during oxidation is known to suppress the injection of silicon self-interstitials that normally accompanies silicon oxidation and lead to observed effects such as Oxidation Enhanced Diffusion (OED) and stacking fault growth. This study uses a layer of implantation induced dislocation loops to measure interstitial injection as a function of SiGe layer thickness. The loops were introduced by implanting phosphorus and thermal...[Show more]

CollectionsANU Research Publications
Date published: 2017
Type: Conference paper
URI: http://hdl.handle.net/1885/218007
Source: ECS Transactions

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