Skip navigation
Skip navigation

Determination of Dopant Density Profiles of Heavily Boron-Doped Silicon From Low Temperature Microphotoluminescence Spectroscopy

Han, Young; Franklin, Evan; MacDonald, Daniel; Nguyen, Hieu; Yan, Di


Low temperature microphotoluminescence spectroscopy (μ-PLS) is employed to determine the inhomogeneous doping profiles for heavily boron-doped regions on silicon wafers. Samples having various Gaussian function doping profiles, in terms of surface dopant density and depth factor, are prepared via two-step thermal boron diffusion on high resistivity n-type silicon wafers. Measured PL spectra are normalized to the Si band–band luminescence peak, and PL components of undiffused Si are subtracted...[Show more]

CollectionsANU Research Publications
Date published: 2017
Type: Journal article
Source: IEEE Journal of Photovoltaics
DOI: 10.1109/JPHOTOV.2017.2736784


There are no files associated with this item.

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  17 November 2022/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator