Determination of Dopant Density Profiles of Heavily Boron-Doped Silicon From Low Temperature Microphotoluminescence Spectroscopy
Low temperature microphotoluminescence spectroscopy (μ-PLS) is employed to determine the inhomogeneous doping profiles for heavily boron-doped regions on silicon wafers. Samples having various Gaussian function doping profiles, in terms of surface dopant density and depth factor, are prepared via two-step thermal boron diffusion on high resistivity n-type silicon wafers. Measured PL spectra are normalized to the Si band–band luminescence peak, and PL components of undiffused Si are subtracted...[Show more]
|Collections||ANU Research Publications|
|Source:||IEEE Journal of Photovoltaics|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.