Critical Temperature for the Conversion from Wurtzite to Zincblende of the Optical Emission of InAs Nanowires
Rota, Michele B.; Ameruddin, Amira; Wong Leung, Jennifer; Belabbes, Abderrezak; Gao, Qiang; Miriametro, Antonio; Mura, F.; Tan, Hoe; Polimeni, A.; Bechstedt, Friedhelm; Jagadish, Chennupati; Capizzi, M.
One hour annealing at 300 °C changes the optical emission characteristics of InAs nanowires (NWs) from the wurtzite (WZ) phase into that of zincblende (ZB). These results are accounted for by the conversion of a small fraction of the NW WZ metastable structure into the stable ZB structure. Several paths toward the polytype transformation in the configuration space are also demonstrated using first-principles calculations. For lower annealing temperatures, emission which is likely related to WZ...[Show more]
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|Source:||Journal of Physical Chemistry C|
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