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An enhanced alneal process to produce SRV < 1cm/s in 1 Ω cm n-type Si

Collett, Katherine A.; Bonilla, Ruy S.; Hamer, Phillip; Bourret-Sicotte, Gabrielle; Lobo, Richard; Kho, Teng; Wilshaw, Peter R.

Description

The alneal is one of the most effective methods of electrically passivating a silicon surface, and has been used by numerous research groups since the 1980s. In this work, we present an enhanced alneal process that substantially improves its effectiveness. Previously, the success afforded by the standard alneal has been attributed to the chemical passivation provided by hydrogenation of the Si-SiO2 interface. However, the work presented here shows that it is possible to enhance the surface...[Show more]

CollectionsANU Research Publications
Date published: 2017
Type: Journal article
URI: http://hdl.handle.net/1885/217840
Source: Solar Energy Materials and Solar Cells
DOI: 10.1016/j.solmat.2017.06.022

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