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Activation Kinetics of the Boron-oxygen Defect in Compensated n- and p-type Silicon Studied by High-Injection Micro-Photoluminescence

Sun, Ryan; Nguyen, Hieu; Sio, Hang Cheong (Kelvin); Rougieux, Fiacre; MacDonald, Daniel

Description

Insitu measurement of the activation kinetics of the slowly forming recombination center (SRC) of the boron-oxygen defect in compensated n- and p-type silicon (n-Si and p-Si) under high-injection conditions is realized through micro-photoluminescence measurements. The high-injection conditions significantly accelerate the defect activation. Another advantage of this method is that the injection level can be kept almost constant during the defect activation and in differently doped samples, as...[Show more]

dc.contributor.authorSun, Ryan
dc.contributor.authorNguyen, Hieu
dc.contributor.authorSio, Hang Cheong (Kelvin)
dc.contributor.authorRougieux, Fiacre
dc.contributor.authorMacDonald, Daniel
dc.date.accessioned2020-12-20T20:51:35Z
dc.date.available2020-12-20T20:51:35Z
dc.identifier.issn2156-3381
dc.identifier.urihttp://hdl.handle.net/1885/217825
dc.description.abstractInsitu measurement of the activation kinetics of the slowly forming recombination center (SRC) of the boron-oxygen defect in compensated n- and p-type silicon (n-Si and p-Si) under high-injection conditions is realized through micro-photoluminescence measurements. The high-injection conditions significantly accelerate the defect activation. Another advantage of this method is that the injection level can be kept almost constant during the defect activation and in differently doped samples, as the high-injection lifetime is dominated by Auger recombination. Courtesy of this, the activation time constant remains steady during the activation of the defects, and the activation time constant and defect concentration in differently doped samples can be compared more directly. The results confirm that the defect activation rate constant is the same at high-injection levels in both n- and p-type samples, and that it only depends on the hole concentration p, but not on [O i] or [B]. The effective saturated defect concentration normalized with [Oi ]2 is independent of the doping in n-Si, and increases with the net doping in p-Si. The latent form reconfiguration model for the defect, instead of the Bs-O2i model, is considered to be more compatible with these findings.
dc.format.mimetypeapplication/pdf
dc.language.isoen_AU
dc.publisherIEEE
dc.sourceIEEE Journal of Photovoltaics
dc.titleActivation Kinetics of the Boron-oxygen Defect in Compensated n- and p-type Silicon Studied by High-Injection Micro-Photoluminescence
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume7
dc.date.issued2017
local.identifier.absfor091203 - Compound Semiconductors
local.identifier.ariespublicationa383154xPUB8303
local.type.statusPublished Version
local.contributor.affiliationSun, Ryan, College of Engineering and Computer Science, ANU
local.contributor.affiliationNguyen, Hieu, College of Engineering and Computer Science, ANU
local.contributor.affiliationSio, Hang Cheong (Kelvin), College of Engineering and Computer Science, ANU
local.contributor.affiliationRougieux, Fiacre, College of Engineering and Computer Science, ANU
local.contributor.affiliationMacDonald, Daniel, College of Engineering and Computer Science, ANU
local.bibliographicCitation.issue4
local.bibliographicCitation.startpage988
local.bibliographicCitation.lastpage995
local.identifier.doi10.1109/JPHOTOV.2017.2705420
dc.date.updated2020-11-23T10:09:35Z
local.identifier.scopusID2-s2.0-85020400181
local.identifier.thomsonID000404258900006
CollectionsANU Research Publications

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