Activation Kinetics of the Boron-oxygen Defect in Compensated n- and p-type Silicon Studied by High-Injection Micro-Photoluminescence
Insitu measurement of the activation kinetics of the slowly forming recombination center (SRC) of the boron-oxygen defect in compensated n- and p-type silicon (n-Si and p-Si) under high-injection conditions is realized through micro-photoluminescence measurements. The high-injection conditions significantly accelerate the defect activation. Another advantage of this method is that the injection level can be kept almost constant during the defect activation and in differently doped samples, as...[Show more]
|Collections||ANU Research Publications|
|Source:||IEEE Journal of Photovoltaics|
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