Structural and Optical Characterization of Ge Nanocrystals Showing Large Nonvolatile Memories in Metal-oxide-semiconductor Structures
Kim, Sung; Choi, Suk Ho; Park, C J; Cho, K H; Cho, H Y; Elliman, Robert
Description
The structural and the optical properties of Ge nanocrystals (NCs) showing large capacitance-voltage hysteresis have been studied by using infrared photoluminescence (PL), high-resolution transmission electron microscopy (HRTEM), high-resolution X-ray diffraction (HRXRD). The memory effect strongly depends on the implant dose, the oxide thickness, and the annealing temperature in metal-oxide-semiconductor devices containing Ge NCs. Well-defined C-V characteristics with large hysteresis are...[Show more]
dc.contributor.author | Kim, Sung | |
---|---|---|
dc.contributor.author | Choi, Suk Ho | |
dc.contributor.author | Park, C J | |
dc.contributor.author | Cho, K H | |
dc.contributor.author | Cho, H Y | |
dc.contributor.author | Elliman, Robert | |
dc.date.accessioned | 2015-12-07T22:26:58Z | |
dc.identifier.issn | 0374-4884 | |
dc.identifier.uri | http://hdl.handle.net/1885/21680 | |
dc.description.abstract | The structural and the optical properties of Ge nanocrystals (NCs) showing large capacitance-voltage hysteresis have been studied by using infrared photoluminescence (PL), high-resolution transmission electron microscopy (HRTEM), high-resolution X-ray diffraction (HRXRD). The memory effect strongly depends on the implant dose, the oxide thickness, and the annealing temperature in metal-oxide-semiconductor devices containing Ge NCs. Well-defined C-V characteristics with large hysteresis are found only for annealing temperatures ≥950 °C where Ge NCs are known to form. HRTEM demonstrates the existence of Ge NCs which are almost aligned at an average distance of about 6.7 nm from the SiO2/Si interface. This suggests that the memory effect can be enhanced by accurately controlling the distribution of Ge NCs with respect to the Si/SiO2 interface, although it is also influenced by implantation-induced deep-level defects and SiGe complexes formed at the interface, as confirmed by PL and HRXRD. | |
dc.publisher | Hanguk Mulli Hakhoe | |
dc.source | Journal of the Korean Physical Society | |
dc.subject | Keywords: Capacitance-voltage hysteresis; Ge nanocrystals; High-resolution X-ray diffraction; Implantation; Nonvolatile memory; Photoluminescence | |
dc.title | Structural and Optical Characterization of Ge Nanocrystals Showing Large Nonvolatile Memories in Metal-oxide-semiconductor Structures | |
dc.type | Journal article | |
local.description.notes | Imported from ARIES | |
local.identifier.citationvolume | 49 | |
dc.date.issued | 2006 | |
local.identifier.absfor | 020405 - Soft Condensed Matter | |
local.identifier.absfor | 020406 - Surfaces and Structural Properties of Condensed Matter | |
local.identifier.absfor | 100799 - Nanotechnology not elsewhere classified | |
local.identifier.ariespublication | u4047546xPUB18 | |
local.type.status | Published Version | |
local.contributor.affiliation | Kim, Sung, Kyung Hee University | |
local.contributor.affiliation | Choi, Suk Ho, Kyung Hee University | |
local.contributor.affiliation | Park, C J, Dongguk University | |
local.contributor.affiliation | Cho, K H, Dongguk University | |
local.contributor.affiliation | Cho, H Y, Dongguk University | |
local.contributor.affiliation | Elliman, Robert, College of Physical and Mathematical Sciences, ANU | |
local.description.embargo | 2037-12-31 | |
local.bibliographicCitation.issue | 3 | |
local.bibliographicCitation.startpage | 959 | |
local.bibliographicCitation.lastpage | 962 | |
dc.date.updated | 2015-12-07T09:48:13Z | |
local.identifier.scopusID | 2-s2.0-33749817447 | |
Collections | ANU Research Publications |
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