Structural and Optical Characterization of Ge Nanocrystals Showing Large Nonvolatile Memories in Metal-oxide-semiconductor Structures
The structural and the optical properties of Ge nanocrystals (NCs) showing large capacitance-voltage hysteresis have been studied by using infrared photoluminescence (PL), high-resolution transmission electron microscopy (HRTEM), high-resolution X-ray diffraction (HRXRD). The memory effect strongly depends on the implant dose, the oxide thickness, and the annealing temperature in metal-oxide-semiconductor devices containing Ge NCs. Well-defined C-V characteristics with large hysteresis are...[Show more]
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|Source:||Journal of the Korean Physical Society|
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