Cuevas, Andres; Forster, Maxime; Rougieux, Fiacre; MacDonald, Daniel
This paper discusses the role of compensation engineering as a means to allow higher concentrations of dopants in silicon than would otherwise be acceptable for solar cell fabrication. Special attention is given to tri-doping, a technique consisting on the addition of gallium to boron and phosphorus doped UMG-Si (upgraded metallurgical grade silicon) feedstock to better control the net dopant density. Firstly, we review the current understanding of compensated silicon, focusing on the...[Show more]
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