Unexpected benefits of stacking faults on the electronic structure and optical emission in wurtzite GaAs/GaInP core/shell nanowires
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yuan, xiaoming; Li, Lin; Li, Ziyuan; Wang, Fan; Wang, Naiyin; Fu, Lan; He, Jun; Tan, Hark Hoe; Jagadish, Chennupati
Description
Wurtzite (WZ) GaAs nanowires (NWs) are of considerable interest for novel optoelectronic applications, yet high quality NWs are still under development. Understanding of their polytypic crystal structure and band structure is the key to improving their emission characteristics. In this work we report that the Ga1−xInxP shell provides ideal passivation on polytypic WZ GaAs NWs, producing high quantum efficiency (up to 80%). From optical measurements, we find that the polytypic nature of the NWs...[Show more]
Collections | ANU Research Publications |
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Date published: | 2019-04-01 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/215300 |
Source: | Nanoscale |
DOI: | 10.1039/c9nr01213c |
Access Rights: | Open Access |
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File | Description | Size | Format | Image |
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WZ GaAs final-accepted-NoPublisher.pdf | 10.97 MB | Adobe PDF |
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