Recombination in n- and p- type silicon emitters contaminated with iron
Crystalline silicon wafers containing deliberately introduced Fe were subject to phosphorus and boron diffusions, in order to examine the effect of gettered Fe on the recombination properties of the diffused emitter regions. For the case of boron diffusions, the presence of gettered Fe caused increased recombination in the emitter region, while for phosphorus diffusions there was no noticeable effect. This occurred despite the fact that the boron diffusions were much less effective at gettering...[Show more]
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|Source:||Proceedings of the World Conference on Photovoltaic Energy Conversion 2006|
|01_MacDonald_Recombination_in_n-_and_p-_2006.pdf||243.76 kB||Adobe PDF||Request a copy|
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