High external quantum efficiency of planar semiconductor structures
We have measured a very high photoluminescence external quantum efficiency (EQE) of 92% for a GaAs/GaInP double heterostructure mounted on a planar substrate. The measurement was made using a system we developed for accurately measuring the external quantum efficiency of highly radiatively efficient structures. The technique involves measuring uncalibrated photoluminescence and thermal signals from an optically pumped structure, as a function of incident laser power. The ac measurement...[Show more]
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