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Towards a direct band gap group IV Ge-based material

Tran, Tuan; Matthews, Jay; Williams, James

Description

A silicon-compatible laser source is of utmost importance for a successful photonic integrated circuit. The conventional solution using direct band gap III-V materials adds significant complexity into the fabrication process because the active materials have to be bonded or grown on a largely mismatched silicon substrate. Recently, germanium has been considered a promising material for silicon photonic applications due to its interesting electronic band structure. Several concepts to realise a...[Show more]

CollectionsANU Research Publications
Date published: 2018-07-23
Type: Journal article
URI: http://hdl.handle.net/1885/213601
Source: Materials Science in Semiconductor Processing
DOI: 10.1016/j.mssp.2018.05.037

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