Skip navigation
Skip navigation

Towards a direct band gap group IV Ge-based material

Tran, Tuan; Matthews, Jay; Williams, James


A silicon-compatible laser source is of utmost importance for a successful photonic integrated circuit. The conventional solution using direct band gap III-V materials adds significant complexity into the fabrication process because the active materials have to be bonded or grown on a largely mismatched silicon substrate. Recently, germanium has been considered a promising material for silicon photonic applications due to its interesting electronic band structure. Several concepts to realise a...[Show more]

CollectionsANU Research Publications
Date published: 2018-07-23
Type: Journal article
Source: Materials Science in Semiconductor Processing
DOI: 10.1016/j.mssp.2018.05.037


File Description SizeFormat Image
01_Tran_Towards_a_direct_band_gap_2019.pdf2.48 MBAdobe PDFThumbnail

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  19 May 2020/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator