Towards a direct band gap group IV Ge-based material
A silicon-compatible laser source is of utmost importance for a successful photonic integrated circuit. The conventional solution using direct band gap III-V materials adds significant complexity into the fabrication process because the active materials have to be bonded or grown on a largely mismatched silicon substrate. Recently, germanium has been considered a promising material for silicon photonic applications due to its interesting electronic band structure. Several concepts to realise a...[Show more]
|Collections||ANU Research Publications|
|Source:||Materials Science in Semiconductor Processing|
|01_Tran_Towards_a_direct_band_gap_2019.pdf||2.48 MB||Adobe PDF|
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